HFP740 transistor equivalent, n-channel enhancement mode field effect transistor.
* 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Equivalent Type:IRF740
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This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for .
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